MMJT9435T1G Overview
This device has a DC current gain of 125 @ 800mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 155mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 550mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.Parts of this part have transition frequencies of 110MHz.Single BJT transistor can be broken down at a voltage of 30V volts.Maximum collector currents can be below 3A volts.
MMJT9435T1G Features
the DC current gain for this device is 125 @ 800mA 1V
a collector emitter saturation voltage of 155mV
the vce saturation(Max) is 550mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is -3A
a transition frequency of 110MHz
MMJT9435T1G Applications
There are a lot of ON Semiconductor MMJT9435T1G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
