MPS2369G Overview

DC current gain in this device equals 40 @ 10mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.The part has a transition frequency of 500MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

MPS2369G Features

the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz

MPS2369G Applications

There are a lot of ON Semiconductor MPS2369G applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver