MPS6601RLRAG Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 500mA 1V.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 100MHz.Single BJT transistor can be broken down at a voltage of 25V volts.During maximum operation, collector current can be as low as 1A volts.

MPS6601RLRAG Features

the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz

MPS6601RLRAG Applications

There are a lot of ON Semiconductor MPS6601RLRAG applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting