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FJA4313RTU

FJA4313RTU

FJA4313RTU

ON Semiconductor

FJA4313RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJA4313RTU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 140V
Max Power Dissipation 130W
Current Rating 10A
Frequency 30MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 130W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 250V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 55
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.779760 $5.77976
10 $5.452604 $54.52604
100 $5.143966 $514.3966
500 $4.852798 $2426.399
1000 $4.578111 $4578.111
FJA4313RTU Product Details

FJA4313RTU Overview


This device has a DC current gain of 55 @ 1A 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.A VCE saturation (Max) of 3V @ 800mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 30MHz is present in the part.A maximum collector current of 17A volts can be achieved.

FJA4313RTU Features


the DC current gain for this device is 55 @ 1A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 30MHz

FJA4313RTU Applications


There are a lot of ON Semiconductor FJA4313RTU applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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