FJA4313RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJA4313RTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
140V
Max Power Dissipation
130W
Current Rating
10A
Frequency
30MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
130W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
17A
DC Current Gain (hFE) (Min) @ Ic, Vce
55 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
400mV
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
5V
hFE Min
55
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.779760
$5.77976
10
$5.452604
$54.52604
100
$5.143966
$514.3966
500
$4.852798
$2426.399
1000
$4.578111
$4578.111
FJA4313RTU Product Details
FJA4313RTU Overview
This device has a DC current gain of 55 @ 1A 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.A VCE saturation (Max) of 3V @ 800mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 30MHz is present in the part.A maximum collector current of 17A volts can be achieved.
FJA4313RTU Features
the DC current gain for this device is 55 @ 1A 5V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at 5V the current rating of this device is 10A a transition frequency of 30MHz
FJA4313RTU Applications
There are a lot of ON Semiconductor FJA4313RTU applications of single BJT transistors.