MSB1218A-RT1 Overview
In this device, the DC current gain is 210 @ 2mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.The part has a transition frequency of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
MSB1218A-RT1 Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -100mA
a transition frequency of 100MHz
MSB1218A-RT1 Applications
There are a lot of ON Semiconductor MSB1218A-RT1 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
