MSD42WT1 Overview

This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 6V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.A maximum collector current of 150mA volts can be achieved.

MSD42WT1 Features

the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 150mA

MSD42WT1 Applications

There are a lot of ON Semiconductor MSD42WT1 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter