MTP20N15E

new-10%

Manufacturer part number:MTP20N15E

Manufacturer:ON Semiconductor

Description:MTP20N15E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTP20N15E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn80Pb20)
Subcategory	FET General Purpose Power
Voltage - Rated DC	150V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	112W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	112W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1627pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	55.9nC @ 10V
Rise Time	77ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	49 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	60 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead