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MTP20N15E

MTP20N15E

MTP20N15E

ON Semiconductor

MTP20N15E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

MTP20N15E Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 20A
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 112W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 112W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1627pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 55.9nC @ 10V
Rise Time 77ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MTP20N15E Product Details

Description


The MTP20N15E is a Power MOSFET with 20 Amps, 150 Volts N?Channel TO?220. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are especially well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power converters and PWM motor controls.



Features


  • Diode is Characterized for Use in Bridge Circuits

  • IDSS and VDS(on) Specified at Elevated Temperature

  • This is a Pb?Free Device*

  • Avalanche Energy Specified

  • Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode



Applications


  • Low voltage

  • High speed switching applications in power converters

  • PWM motor controls

  • Solar inverters

  • Automotive applications


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