IRL510A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
IRL510A Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1999
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
37W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
440mOhm @ 2.8A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
235pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.6A Tc
Gate Charge (Qg) (Max) @ Vgs
8nC @ 5V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±20V
IRL510A Product Details
IRL510A Description
IRL510A is a 100v advanced power MOSFET. A power MOSFET is a type of metal-oxide-silicon field-effect transistor designed to operate at low voltages while offering high switching speed and optimal efficiency. This innovative technology is central to a wide range of applications—including consumer electronics, power supplies, DC-to-DC converters, motor controllers, radio-frequency (RF) applications, transportation technology, and automotive electronics. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IRL510A is in the TO-220-3 package with 37W power dissipation.