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IRL510A

IRL510A

IRL510A

ON Semiconductor

IRL510A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

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IRL510A Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1999
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 37W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 440mOhm @ 2.8A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.6A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
IRL510A Product Details

IRL510A Description


IRL510A is a 100v advanced power MOSFET. A power MOSFET is a type of metal-oxide-silicon field-effect transistor designed to operate at low voltages while offering high switching speed and optimal efficiency. This innovative technology is central to a wide range of applications—including consumer electronics, power supplies, DC-to-DC converters, motor controllers, radio-frequency (RF) applications, transportation technology, and automotive electronics. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IRL510A is in the TO-220-3 package with 37W power dissipation.



IRL510A Features


  • Logic-Level Gate Drive

  • Avalanche Rugged Technology

  • Rugged Gate Oxide Technology

  • Lower Input Capacitance

  • Improved Gate Charge

  • Extended Safe Operating Area

  • Lower Leakage Current: 10μA (Max.) @ VDS = 100V

  • Lower RDS(ON): 0.336? (Typ.)



IRL510A Applications


  • Consumer electronics

  • Power supplies

  • DC-to-DC converters

  • Motor controllers

  • Radio-frequency (RF) applications

  • Transportation technology

  • Automotive electronics


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