Name: MTP2955V
Brand: ON Semiconductor
SKU: MTP2955V
Availability: InStock

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MTP2955V

Manufacturer part number:MTP2955V

Manufacturer:ON Semiconductor

Description:MTP2955V datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTP2955V Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	-12A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	60W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	60W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	100ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	12A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.23Ohm
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	42A
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

MTP2955V Product Details

Description

The MTP2955V is a Power MOSFET 12 Amps, 60 Volts P?Channel TO?220. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power supplies, converters, and power motor controls.