HP8KA1TB

new-10%

Manufacturer part number:HP8KA1TB

Manufacturer:ROHM Semiconductor

Description:MOSFET 2N-CH 30V 14A HSOP8

Case Package:SOT-23

Datasheet:HP8KA1TB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Max Power Dissipation	3W
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	2
Configuration	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	3W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	2.5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds	2550pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	24nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Continuous Drain Current (ID)	14A
Drain-source On Resistance-Max	0.007Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant