NDD01N60T4G

new-10%

Manufacturer part number:NDD01N60T4G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 600V 1.5A 3-Pin(2+Tab) DPAK T/R

Case Package:SOT-23

Datasheet:NDD01N60T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 6 days ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	46W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	46W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 50μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.5A Tc
Gate Charge (Qg) (Max) @ Vgs	7.2nC @ 10V
Rise Time	5.1ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	21.3 ns
Turn-Off Delay Time	16.5 ns
Continuous Drain Current (ID)	1.5A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	6A
DS Breakdown Voltage-Min	600V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free