NDS0605 Description

ON Semiconductor's patented, high-cell-density DMOS technology is used to make NDS0605 P-Channel enhancement mode field effect transistors. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. They can be utilized in most applications requiring up to 180mA DC and can deliver current up to 1A with minimal effort. The NDS0605 is ideal for low-voltage applications that require a low-current high-side switch, according to NDS0605 datasheet.

NDS0605 Features

• High saturation current

• High density cell design for low RDS(ON)

• ?0.18A, ?60V. RDS(ON) = 5 ? @ VGS = ?10 V

• Voltage controlled p-channel small signal switch

NDS0605 Applications

• Load Switching

• DC/DC converter

• DC motor control

• Battery protection

• Power management control