NGD8205NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGD8205NT4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn80Pb20)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
350V
Max Power Dissipation
125W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
20A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
NGD8205N
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Rise Time-Max
8000ns
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation
125W
Case Connection
COLLECTOR
Input Type
Logic
Transistor Application
AUTOMOTIVE IGNITION
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
20A
Collector Emitter Breakdown Voltage
390V
Turn On Time
6500 ns
Test Condition
300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic
1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff)
18500 ns
Current - Collector Pulsed (Icm)
50A
Td (on/off) @ 25°C
-/5μs
Gate-Emitter Voltage-Max
15V
Gate-Emitter Thr Voltage-Max
2.1V
Fall Time-Max (tf)
14000ns
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.428160
$4.42816
10
$4.177509
$41.77509
100
$3.941047
$394.1047
500
$3.717969
$1858.9845
1000
$3.507517
$3507.517
NGD8205NT4 Product Details
NGD8205NT4 Description
The NGD8205NT4 is an Ignition IGBT with 20 Amp, 350 Volt, N?Channel DPAK. For usage in inductive coil driver applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need high voltage and high current switching are some of the most common usage.
NGD8205NT4 Features
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate?Emitter Resistor (RGE)
These are Pb?Free Devices
Ideal for Coil?on?Plug and Driver?on?Coil Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load