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NGTB03N60R2DT4G

  • NGTB03N60R2DT4G
  • NGTB03N60R2DT4G

NGTB03N60R2DT4G

NGTB03N60R2DT4G

ON Semiconductor

NGTB03N60R2DT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB03N60R2DT4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 27 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 49W
Reach Compliance Code not_compliant
Element Configuration Single
Input Type Standard
Power - Max 49W
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 9A
Reverse Recovery Time 65 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Max Breakdown Voltage 600V
Test Condition 300V, 3A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 3A
Gate Charge 17nC
Current - Collector Pulsed (Icm) 12A
Td (on/off) @ 25°C 27ns/59ns
Switching Energy 50μJ (on), 27μJ (off)
Height 2.38mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
NGTB03N60R2DT4G Product Details

NGTB03N60R2DT4G Description


NGTB03N60R2DT4G is a Single Transistor from the manufacturer of ON Semiconductor with an operating temperature of 175°C TJ. The Collector-Emitter Breakdown Voltage of NGTB03N60R2DT4G is 600V and its maximum power dissipation is 49W. NGTB03N60R2DT4G has 3 pins and it is available in TO-252-3, DPak (2 Leads + Tab), and SC-63 packaging way. The Collector-Emitter Voltage (VCEO) of NGTB03N60R2DT4G is 600V, the Reverse Recovery Time is 65 ns and its Collector-Emitter Saturation Voltage is 1.7V.



NGTB03N60R2DT4G Features


  • Mounting Type: Surface Mount

  • Input Type: Standard

  • Element Configuration: Single

  • Switching Energy: 50μJ (on), 27μJ (off)



NGTB03N60R2DT4G Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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