NGTB15N135IHRWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB15N135IHRWG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
357W
Pin Count
3
Element Configuration
Single
Input Type
Standard
Power - Max
357W
Collector Emitter Voltage (VCEO)
2.65V
Max Collector Current
30A
Collector Emitter Breakdown Voltage
1.35kV
Voltage - Collector Emitter Breakdown (Max)
1350V
Test Condition
600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.65V @ 15V, 15A
IGBT Type
Trench Field Stop
Gate Charge
156nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
-/170ns
Switching Energy
420μJ (off)
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.829882
$2.829882
10
$2.669700
$26.697
100
$2.518585
$251.8585
500
$2.376024
$1188.012
1000
$2.241532
$2241.532
NGTB15N135IHRWG Product Details
NGTB15N135IHRWG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on?state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications.
NGTB15N135IHRWG Features
? Extremely Efficient Trench with Fieldstop Technology
? 1350 V Breakdown Voltage
? Optimized for Low Case Temperature in IH Cooker Application