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IXST30N60BD1

IXST30N60BD1

IXST30N60BD1

IXYS

Trans IGBT Chip N-CH 600V 55A 3-Pin(2+Tab) TO-268AA

SOT-23

IXST30N60BD1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH SPEED
Max Power Dissipation 200W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*30N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 55A
Reverse Recovery Time 50 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 65 ns
Test Condition 480V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 55A
Turn Off Time-Nom (toff) 520 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 30ns/150ns
Switching Energy 1.5mJ (off)
RoHS Status RoHS Compliant

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