IRGS10B60KDPBF

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Manufacturer part number:IRGS10B60KDPBF

Manufacturer:Infineon Technologies

Description:IRGS10B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGS10B60KDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	156W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	22A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRGS10B60KDPBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	156W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	20ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	22A
Reverse Recovery Time	90 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	50 ns
Test Condition	400V, 10A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 10A
Turn Off Time-Nom (toff)	276 ns
IGBT Type	NPT
Gate Charge	38nC
Current - Collector Pulsed (Icm)	44A
Td (on/off) @ 25°C	30ns/230ns
Switching Energy	140μJ (on), 250μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Height	4.699mm
Length	10.668mm
Width	9.652mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free