IRG4BC30F-S Description

IRG4BC30F-S emerges as an insulated gate bipolar transistor provided by Infineon Technologies. It is a generation 4 IGBT providing tighter parameter distribution and higher efficiency than generation 3. IRG4BC30F-S is optimized for medium operating frequencies (1-5 kHz in hard switching) and for specified application conditions. It is available in the TO-220AB package for the purpose of saving board space.

IRG4BC30F-S Features

Available in the TO-220AB package

Tighter parameter distribution

Higher efficiency

Optimized for specified application conditions

Medium operating frequencies

IRG4BC30F-S Applications

AC motors

Frequency converters

Switching power supplies

Lighting circuits

Traction drives