NGTB25N120FL2WAG

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Manufacturer part number:NGTB25N120FL2WAG

Manufacturer:ON Semiconductor

Description:NGTB25N120FL2WAG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB25N120FL2WAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type	Through Hole
Package / Case	TO-247-4
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2016
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Terminal Finish	Tin (Sn)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Input Type	Standard
Power - Max	385W
Reverse Recovery Time	136ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	100A
Test Condition	600V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 25A
IGBT Type	Field Stop
Gate Charge	181nC
Td (on/off) @ 25°C	17ns/113ns
Switching Energy	990μJ (on), 660μJ (off)
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
90	$4.31644	$388.4796

NGTB25N120FL2WAG Description

This Insulated Gate Bipolar Transistor (IGBT) offers low on state voltage and little switching loss, and it has a durable and economical Field Stop II Trench structure. It performs exceptionally well in demanding switching applications. Additionally, compared to the conventional TO247-3L packaging, the novel device is packaged in a TO247-4L container that significantly reduces Eon Losses. The IGBT is a good choice for solar and UPS applications. A soft and fast co-packaged free wheeling diode with a low forward voltage is incorporated into the device.