STGF12NB60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGF12NB60KD Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Packaging
Tape & Reel (TR)
Series
PowerMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Max Power Dissipation
30W
Reach Compliance Code
unknown
Base Part Number
STGF12
Input Type
Standard
Power - Max
30W
Collector Emitter Voltage (VCEO)
2.8V
Max Collector Current
14A
Reverse Recovery Time
37 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 12A
Gate Charge
54nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
25ns/96ns
Switching Energy
152μJ (on), 258μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STGF12NB60KD Product Details
STGF12NB60KD DESCRIPTION
Using the latest high voltage technology based on apatented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. Thesuffix “K” identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof inorder to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.