Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Packaging	Tube
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.6V
Max Collector Current	60A
Reverse Recovery Time	350 ns
Collector Emitter Breakdown Voltage	1.4kV
Voltage - Collector Emitter Breakdown (Max)	1400V
Turn On Time	66 ns
Test Condition	960V, 28A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 28A
Turn Off Time-Nom (toff)	915 ns
Gate Charge	88nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	16ns/190ns
Switching Energy	3.6mJ (on), 3.9mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant

IXGX28N140B3H1

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