NGTB25N120FL3WG

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Manufacturer part number:NGTB25N120FL3WG

Manufacturer:ON Semiconductor

Description:NGTB25N120FL3WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB25N120FL3WG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2016
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Max Power Dissipation	349W
Input Type	Standard
Power - Max	349W
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	100A
Reverse Recovery Time	114 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.7V
Test Condition	600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 25A
IGBT Type	Trench Field Stop
Gate Charge	136nC
Td (on/off) @ 25°C	15ns/109ns
Switching Energy	1mJ (on), 700μJ (off)
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$5.023043	$5.023043
10	$4.738720	$47.3872
100	$4.470491	$447.0491
500	$4.217444	$2108.722
1000	$3.978721	$3978.721

NGTB25N120FL3WG Description

The NGTB25N120FL3WG Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on?state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage.