STGW60V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW60V60F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
375W
Base Part Number
STGW60
Element Configuration
Single
Power Dissipation
375W
Input Type
Standard
Turn On Delay Time
60 ns
Turn-Off Delay Time
208 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.35V
Test Condition
400V, 60A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 60A
IGBT Type
Trench Field Stop
Gate Charge
334nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
60ns/208ns
Switching Energy
750μJ (on), 550μJ (off)
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.183000
$5.183
10
$4.889623
$48.89623
100
$4.612852
$461.2852
500
$4.351747
$2175.8735
1000
$4.105421
$4105.421
STGW60V60F Product Details
STGW60V60F Description
This IGBT was created employing a cutting-edge, exclusive trench gate fieldstop structure. The device is a component of the V series of IGBTs, which stand for the best conduction and switching losses compromise for very high frequency converters. Additionally, safer paralleling operation is produced by the positive VCE(sat) temperature coefficient and extremely narrow parameter distribution.