NGTB30N60L2WG

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Manufacturer part number:NGTB30N60L2WG

Manufacturer:ON Semiconductor

Description:NGTB30N60L2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB30N60L2WG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	175°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	225W
Reach Compliance Code	not_compliant
Element Configuration	Single
Input Type	Standard
Power - Max	225W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6V
Max Collector Current	100A
Reverse Recovery Time	70 ns
Collector Emitter Breakdown Voltage	600V
Test Condition	300V, 30A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 30A
Gate Charge	166nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	100ns/390ns
Switching Energy	310μJ (on), 1.14mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$4.81000	$4.81
30	$4.08700	$122.61

NGTB30N60L2WG Description

Worldway Electronics distributes the NGTB30N60L2WG, which is made by On Semiconductor, is an N-Channel IGBT with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V. It belongs to the IGBT Transistors category. It's used in a variety of industries, including automotive hybrid, electric, and powertrain systems, industrial motor drives, enterprise systems, and enterprise machines. IGBT, N-Channel with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V are the major parameters of this part. It's also eco-friendly and RoHS-compliant (lead-free / RoHS-compliant).