NGTB45N60SWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB45N60SWG Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Input Type
Standard
Power - Max
250W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.4V
Max Collector Current
90A
Reverse Recovery Time
376 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
400V, 45A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 45A
IGBT Type
Trench Field Stop
Gate Charge
134nC
Current - Collector Pulsed (Icm)
180A
Td (on/off) @ 25°C
70ns/144ns
Switching Energy
550μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
90
$4.65978
$419.3802
NGTB45N60SWG Product Details
NGTB45N60SWG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop (FS) Trench construction and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for half-bridge resonant applications. Incorporated into the device is a soft and fast co?packaged free-wheeling diode with a low forward voltage.
NGTB45N60SWG Features
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation