NGTB40N120LWG

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Manufacturer part number:NGTB40N120LWG

Manufacturer:ON Semiconductor

Description:NGTB40N120LWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB40N120LWG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	260W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	260W
Transistor Application	MOTOR CONTROL
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	80A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	178 ns
Test Condition	600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 40A
Turn Off Time-Nom (toff)	565 ns
IGBT Type	Trench Field Stop
Gate Charge	420nC
Current - Collector Pulsed (Icm)	320A
Td (on/off) @ 25°C	140ns/360ns
Switching Energy	5.5mJ (on), 1.4mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	21.08mm
Length	16.26mm
Width	5.3mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free