NGTB50N60FWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB50N60FWG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 21 hours ago)
Package / Case
TO-247
Surface Mount
NO
Number of Pins
3
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
223W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Element Configuration
Single
Power Dissipation
223W
Turn On Delay Time
117 ns
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
285 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
100A
Reverse Recovery Time
77 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.45V
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
21.4mm
Length
16.25mm
Width
5.3mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.572690
$6.57269
10
$6.200651
$62.00651
100
$5.849671
$584.9671
500
$5.518557
$2759.2785
1000
$5.206186
$5206.186
NGTB50N60FWG Product Details
NGTB50N60FWG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Trench construction and provides superior performance in demanding switching applications, offering both low-on-state voltage and minimal switching loss.
NGTB50N60FWG Features
Optimized for Very Low VCEsat
Low Switching Loss Reduces System Power Dissipation