NGTB60N65FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB60N65FL2WG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2015
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
595W
Input Type
Standard
Power - Max
595W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
100A
Reverse Recovery Time
96 ns
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.64V
Test Condition
400V, 60A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 60A
IGBT Type
Field Stop
Gate Charge
318nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
117ns/265ns
Switching Energy
1.59mJ (on), 660μJ (off)
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$38.150800
$38.1508
10
$35.991321
$359.91321
100
$33.954076
$3395.4076
500
$32.032147
$16016.0735
1000
$30.219007
$30219.007
NGTB60N65FL2WG Product Details
NGTB60N65FL2WG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.
NGTB60N65FL2WG Features
? Extremely Efficient Trench with Field Stop Technology