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NGTD30T120F2WP

  • NGTD30T120F2WP
  • NGTD30T120F2WP

NGTD30T120F2WP

NGTD30T120F2WP

ON Semiconductor

NGTD30T120F2WP datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTD30T120F2WP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 32 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case Die
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2016
Pbfree Code yes
Part Status Active
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 200A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
79 $4.65975 $368.12025
NGTD30T120F2WP Product Details

NGTD30T120F2WP                       Description

 

Trench Field Stop II IGBT Die for motor drive and inverter                applications.


NGTD30T120F2WP                   Features

? Extremely Efficient Trench with Field Stop Technology

? Low VCE(sat) Loss Reduces System Power Dissipation

NGTD30T120F2WP                         Applications


? Industrial Motor Drives

? Solar Inverters

? UPS Systems

? Welding


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