IRG4BC15UD-LPBF

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Manufacturer part number:IRG4BC15UD-LPBF

Manufacturer:Infineon Technologies

Description:IRG4BC15UD-LPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC15UD-LPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Weight	2.084002g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
JESD-609 Code	e3
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	49W
Peak Reflow Temperature (Cel)	260
Current Rating	14A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Element Configuration	Single
Power Dissipation	49W
Input Type	Standard
Turn On Delay Time	17 ns
Transistor Application	POWER CONTROL
Rise Time	20ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	160 ns
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	14A
Reverse Recovery Time	28 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.02V
Turn On Time	37 ns
Test Condition	480V, 7.8A, 75 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 7.8A
Turn Off Time-Nom (toff)	400 ns
Gate Charge	23nC
Current - Collector Pulsed (Icm)	42A
Td (on/off) @ 25°C	17ns/160ns
Switching Energy	240μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	9.652mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free