STGD18N40LZ-1

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Manufacturer part number:STGD18N40LZ-1

Manufacturer:STMicroelectronics

Description:STGD18N40LZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD18N40LZ-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	VOLTAGE CLAMPING
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	125W
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD18
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Logic
Power - Max	125W
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	360V
Max Collector Current	25A
Collector Emitter Breakdown Voltage	420V
Max Breakdown Voltage	420V
Turn On Time	4450 ns
Test Condition	300V, 10A, 5V
Vce(on) (Max) @ Vge, Ic	1.7V @ 4.5V, 10A
Turn Off Time-Nom (toff)	22200 ns
Gate Charge	29nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	650ns/13.5μs
Gate-Emitter Voltage-Max	16V
RoHS Status	ROHS3 Compliant