NGTG35N65FL2WG

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Manufacturer part number:NGTG35N65FL2WG

Manufacturer:ON Semiconductor

Description:NGTG35N65FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTG35N65FL2WG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2015
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Max Power Dissipation	300W
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	70A
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	108 ns
Test Condition	400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 35A
Turn Off Time-Nom (toff)	231 ns
IGBT Type	Field Stop
Gate Charge	125nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	72ns/132ns
Switching Energy	840μJ (on), 280μJ (off)
Height	21.08mm
Length	16.26mm
Width	5.3mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free