NJT4031NT1G Overview

In this device, the DC current gain is 200 @ 1A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 300mA, 3A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 215MHz.A breakdown input voltage of 40V volts can be used.In extreme cases, the collector current can be as low as 3A volts.

NJT4031NT1G Features

the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz

NJT4031NT1G Applications

There are a lot of ON Semiconductor NJT4031NT1G applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting