ZXTN25060BFHTA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 2V.A collector emitter saturation voltage of 150mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 175mV @ 350mA, 3.5A.Emitter base voltages of 7V can achieve high levels of efficiency.The current rating of this fuse is 3.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 185MHz.Breakdown input voltage is 60V volts.Collector current can be as low as 3.5A volts at its maximum.

ZXTN25060BFHTA Features

the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 175mV @ 350mA, 3.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3.5A
a transition frequency of 185MHz

ZXTN25060BFHTA Applications

There are a lot of Diodes Incorporated ZXTN25060BFHTA applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter