NJVMJD44H11T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 2A 1V.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 85MHz.A breakdown input voltage of 80V volts can be used.During maximum operation, collector current can be as low as 8A volts.
NJVMJD44H11T4G Features
the DC current gain for this device is 60 @ 2A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 85MHz
NJVMJD44H11T4G Applications
There are a lot of ON Semiconductor NJVMJD44H11T4G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
