NJVMJD45H11D3T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.There is a transition frequency of 90MHz in the part.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
NJVMJD45H11D3T4G Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
a transition frequency of 90MHz
NJVMJD45H11D3T4G Applications
There are a lot of ON Semiconductor NJVMJD45H11D3T4G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
