NSS12100UW3TCG Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 440mV @ 100mA, 1A.Emitter base voltages of 5V can achieve high levels of efficiency.A transition frequency of 200MHz is present in the part.The breakdown input voltage is 12V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

NSS12100UW3TCG Features

the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 440mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

NSS12100UW3TCG Applications

There are a lot of ON Semiconductor NSS12100UW3TCG applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface