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KSA1381ESTU

KSA1381ESTU

KSA1381ESTU

ON Semiconductor

KSA1381ESTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA1381ESTU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 7W
Current Rating -100mA
Frequency 150MHz
Base Part Number KSA1381
Number of Elements 1
Element Configuration Single
Power Dissipation 7W
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -300V
Max Collector Current -100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage -300V
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -600mV
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) -5V
hFE Min 40
Max Junction Temperature (Tj) 150°C
Height 14.2mm
Length 8mm
Width 3.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.286878 $0.286878
10 $0.270640 $2.7064
100 $0.255321 $25.5321
500 $0.240869 $120.4345
1000 $0.227235 $227.235
KSA1381ESTU Product Details

KSA1381ESTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at -5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.As a result, the part has a transition frequency of 150MHz.There is a 300V maximal voltage in the device due to collector-emitter breakdown.The maximum collector current is -100mA volts.

KSA1381ESTU Features


the DC current gain for this device is 100 @ 10mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz

KSA1381ESTU Applications


There are a lot of ON Semiconductor KSA1381ESTU applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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