KSA1381ESTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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KSA1381ESTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-300V
Max Power Dissipation
7W
Current Rating
-100mA
Frequency
150MHz
Base Part Number
KSA1381
Number of Elements
1
Element Configuration
Single
Power Dissipation
7W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-300V
Max Collector Current
-100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
-300V
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-600mV
Collector Base Voltage (VCBO)
-300V
Emitter Base Voltage (VEBO)
-5V
hFE Min
40
Max Junction Temperature (Tj)
150°C
Height
14.2mm
Length
8mm
Width
3.25mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.286878
$0.286878
10
$0.270640
$2.7064
100
$0.255321
$25.5321
500
$0.240869
$120.4345
1000
$0.227235
$227.235
KSA1381ESTU Product Details
KSA1381ESTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at -5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.As a result, the part has a transition frequency of 150MHz.There is a 300V maximal voltage in the device due to collector-emitter breakdown.The maximum collector current is -100mA volts.
KSA1381ESTU Features
the DC current gain for this device is 100 @ 10mA 10V a collector emitter saturation voltage of -600mV the vce saturation(Max) is 600mV @ 2mA, 20mA the emitter base voltage is kept at -5V the current rating of this device is -100mA a transition frequency of 150MHz
KSA1381ESTU Applications
There are a lot of ON Semiconductor KSA1381ESTU applications of single BJT transistors.