NSS1C201MZ4T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSS1C201MZ4T1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Base Part Number
NSS1C201
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Power - Max
800mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
180mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
7V
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.25144
$0.25144
2,000
$0.23032
$0.46064
5,000
$0.21624
$1.0812
10,000
$0.20216
$2.0216
25,000
$0.19981
$4.99525
NSS1C201MZ4T1G Product Details
NSS1C201MZ4T1G Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 180mV @ 200mA, 2A.With the emitter base voltage set at 7V, an efficient operation can be achieved.In the part, the transition frequency is 100MHz.Breakdown input voltage is 100V volts.A maximum collector current of 2A volts is possible.
NSS1C201MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V a collector emitter saturation voltage of 180mV the vce saturation(Max) is 180mV @ 200mA, 2A the emitter base voltage is kept at 7V a transition frequency of 100MHz
NSS1C201MZ4T1G Applications
There are a lot of ON Semiconductor NSS1C201MZ4T1G applications of single BJT transistors.