NSS40600CF8T1G Overview

This device has a DC current gain of 220 @ 1A 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 180mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 400mA, 4A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.As a result, the part has a transition frequency of 100MHz.The maximum collector current is 6A volts.

NSS40600CF8T1G Features

the DC current gain for this device is 220 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

NSS40600CF8T1G Applications

There are a lot of ON Semiconductor NSS40600CF8T1G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter