2SD1803S-TL-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SD1803S-TL-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
2-TP-FA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 150mA, 3A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
5A
Frequency - Transition
180MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.36000
$0.36
500
$0.3564
$178.2
1000
$0.3528
$352.8
1500
$0.3492
$523.8
2000
$0.3456
$691.2
2500
$0.342
$855
2SD1803S-TL-H Product Details
2SD1803S-TL-H Overview
This device has a DC current gain of 140 @ 500mA 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 150mA, 3A.This product comes in a 2-TP-FA device package from the supplier.The device exhibits a collector-emitter breakdown at 50V.
2SD1803S-TL-H Features
the DC current gain for this device is 140 @ 500mA 2V the vce saturation(Max) is 400mV @ 150mA, 3A the supplier device package of 2-TP-FA
2SD1803S-TL-H Applications
There are a lot of Rochester Electronics, LLC 2SD1803S-TL-H applications of single BJT transistors.