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2SD1803S-TL-H

2SD1803S-TL-H

2SD1803S-TL-H

Rochester Electronics, LLC

2SD1803S-TL-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2SD1803S-TL-H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package 2-TP-FA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 150mA, 3A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 180MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.36000 $0.36
500 $0.3564 $178.2
1000 $0.3528 $352.8
1500 $0.3492 $523.8
2000 $0.3456 $691.2
2500 $0.342 $855
2SD1803S-TL-H Product Details

2SD1803S-TL-H Overview


This device has a DC current gain of 140 @ 500mA 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 150mA, 3A.This product comes in a 2-TP-FA device package from the supplier.The device exhibits a collector-emitter breakdown at 50V.

2SD1803S-TL-H Features


the DC current gain for this device is 140 @ 500mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the supplier device package of 2-TP-FA

2SD1803S-TL-H Applications


There are a lot of Rochester Electronics, LLC 2SD1803S-TL-H applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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