PBSS4250X,115 Overview

This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 380mV ensures maximum design flexibility.A VCE saturation (Max) of 320mV @ 200mA, 2A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As you can see, the part has a transition frequency of 100MHz.The breakdown input voltage is 50V volts.When collector current reaches its maximum, it can reach 2A volts.

PBSS4250X,115 Features

the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 380mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS4250X,115 Applications

There are a lot of Nexperia USA Inc. PBSS4250X,115 applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver