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MJW21193G

MJW21193G

MJW21193G

ON Semiconductor

MJW21193G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJW21193G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Number of Pins 3
Weight 22.679619g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1995
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -250V
Max Power Dissipation200W
Current Rating-16A
Frequency 4MHz
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Gain Bandwidth Product4MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage250V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage1.4V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 21.08mm
Length 16.26mm
Width 5.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1496 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.45000$4.45
30$3.80167$114.0501
120$3.31317$397.5804
510$2.84116$1448.9916

MJW21193G Product Details

MJW21193G Overview


DC current gain in this device equals 20 @ 8A 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.4V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 3.2A, 16A.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -16A for this device.A transition frequency of 4MHz is present in the part.In extreme cases, the collector current can be as low as 16A volts.

MJW21193G Features


the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz

MJW21193G Applications


There are a lot of ON Semiconductor MJW21193G applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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