NSV1C201MZ4T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.With a collector emitter saturation voltage of 180mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 180mV @ 200mA, 2A.Continuous collector voltages should be kept at 2A to achieve high efficiency.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 100MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 2A volts is possible.
NSV1C201MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSV1C201MZ4T1G Applications
There are a lot of ON Semiconductor NSV1C201MZ4T1G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
