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NSV2SA2029M3T5G

NSV2SA2029M3T5G

NSV2SA2029M3T5G

ON Semiconductor

NSV2SA2029M3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSV2SA2029M3T5G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation265mW
Terminal Position DUAL
Terminal FormFLAT
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Power - Max 265mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 500pA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage50V
Transition Frequency 140MHz
Frequency - Transition 140MHz
Collector Base Voltage (VCBO) 60V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:109670 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.781040$3.78104
10$3.567019$35.67019
100$3.365112$336.5112
500$3.174634$1587.317
1000$2.994938$2994.938

NSV2SA2029M3T5G Product Details

NSV2SA2029M3T5G Overview


This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.There is a transition frequency of 140MHz in the part.During maximum operation, collector current can be as low as 100mA volts.

NSV2SA2029M3T5G Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 140MHz

NSV2SA2029M3T5G Applications


There are a lot of ON Semiconductor NSV2SA2029M3T5G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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