NSV2SA2029M3T5G Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.There is a transition frequency of 140MHz in the part.During maximum operation, collector current can be as low as 100mA volts.
NSV2SA2029M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 140MHz
NSV2SA2029M3T5G Applications
There are a lot of ON Semiconductor NSV2SA2029M3T5G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver