NSVBC846BM3T5G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Maintaining the continuous collector voltage at 100mA is essential for high efficiency.The emitter base voltage can be kept at 6V for high efficiency.As a result, the part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

NSVBC846BM3T5G Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

NSVBC846BM3T5G Applications

There are a lot of ON Semiconductor NSVBC846BM3T5G applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface