KSA733GBU Overview

This device has a DC current gain of 200 @ 1mA 6V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -180mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Emitter base voltages of -5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -150mA.Parts of this part have transition frequencies of 180MHz.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.

KSA733GBU Features

the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 180MHz

KSA733GBU Applications

There are a lot of ON Semiconductor KSA733GBU applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter