KSD261CGTA Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 1V DC current gain.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

KSD261CGTA Features

the DC current gain for this device is 200 @ 100mA 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA

KSD261CGTA Applications

There are a lot of ON Semiconductor KSD261CGTA applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver