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SMMJT350T1G

  • SMMJT350T1G
  • SMMJT350T1G

SMMJT350T1G

SMMJT350T1G

ON Semiconductor

SMMJT350T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMMJT350T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 650mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Configuration Single
Power - Max 650mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 300V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.16959 $0.33918
SMMJT350T1G Product Details

SMMJT350T1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.Maximum collector currents can be below 500mA volts.

SMMJT350T1G Features


the DC current gain for this device is 30 @ 50mA 10V

SMMJT350T1G Applications


There are a lot of ON Semiconductor SMMJT350T1G applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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