NSVBC847BLT3G Overview

This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.

NSVBC847BLT3G Features

the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

NSVBC847BLT3G Applications

There are a lot of ON Semiconductor NSVBC847BLT3G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface